 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 21 i d @ v gs = 10v, t c = 100c continuous drain current 14 i dm pulsed drain current 84 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 1200 mj i ar avalanche current 21 a e ar repetitive avalanche energy 30 mj dv/dt peak diode recovery dv/dt 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 11.5 (typical) g the hexfet ? technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry and unique processing of this latest ?state of the art? design achieves: very low on- state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. the hexfet transistors also feature all of the well established advantages of mosfets such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. a repetitive avalanche and dv/dt rated IRF460 hexfet ? transistors thru-hole (to-204aa/ae) www.irf.com 1 500v, n-channel to-3 product summary part number bvdss r ds(on) i d IRF460 500v 0.27 ? 21a features: repetitive avalanche ratings dynamic dv/dt rating hermetically sealed simple drive requirements ease of paralleling pd-90467a IRF460 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction to case ? ? 0.42 r thja junction to ambient ? ? 30 typical socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 21 i sm pulse source current (body diode) ?? 84 v sd diode forward voltage ? ? 1.8 v t j = 25c, i s = 21a, v gs = 0v t rr reverse recovery time ? ? 580 ns t j = 25c, i f = 21a, di/dt 100a/ s q rr reverse recovery charge ? ? 8.1 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 500 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.78 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.27 v gs = 10v, i d = 14a resistance ? ? 0.31 v gs = 10v, i d = 21a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 13 ? ? s v ds = 15v, i ds = 14a i dss zero gate voltage drain current ? ? 25 v ds = 400v, v gs = 0v ? ? 250 v ds = 400v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge 84 ? 190 v gs = 10v, i d = 21a q gs gate-to-source charge 12 ? 27 nc v ds = 250v q gd gate-to-drain (?miller?) charge 60 ? 135 t d (on) turn-on delay time ? ? 35 v dd = 250v, i d = 21a, t r rise time ? ? 120 r g = 2.35 ? t d (off) turn-off delay time ? ? 130 t f fall time ? ? 98 l s + l d total inductance ? 6.1 ? c iss input capacitance ? 4300 v gs = 0v, v ds = 25v c oss output capacitance ? 1000 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 250 ? na nh ns a ? measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) www.irf.com 3 IRF460 IRF460 4 www.irf.com ! ! " " " #$ 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms 100 s dc operation in this area limited by r ds(on) www.irf.com 5 IRF460 $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % + - ' & ( )* " IRF460 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v www.irf.com 7 IRF460 footnotes: i sd 21a, di/dt 160a/ s, v dd 500v, t j 150c suggested r g = 2.35 ? repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, peak i l = 21a, pulse width 300 s; duty cycle 2% case outline and dimensions ?to-204ae (modified to-3) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/2014 |
Price & Availability of IRF460
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |